Abstract
In order to advance the thin film silicon solar cell technology, it is desirable to replace the layers of doped thin film silicon or its alloys with alternative materials that can be deposited by simple physical vapor deposition (PVD) methods. Here, a dopant free a-Si:H solar cell design of Asahi U substrate| MoOx | a-Si:H | LiF | Al is investigated. All the layers, except the intrinsic a-Si:H absorber layer, are deposited by PVD methods. This cell has a power conversion efficiency of 8.02% under the standard test conditions.
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