Abstract
A high-efficiency, S-band Doherty power amplifier (DPA) with wide output power back-off (OPBO) range is presented. A novel parasitic capacitance compensation approach is applied at the output of Cree's GaN high-electron-mobility transistor to achieve high saturation efficiency in a wide OPBO range. Specifically, a parallel shorting microstrip line between the transistor output and its match network is adopted to realise parasitic capacitance compensation. The measurement results indicate good Doherty behaviour with 10 dB back-off efficiency of 40.6-44.2% and saturation efficiency of 70.2-73.3% over 2.9-3.3 GHz. When stimulated by a 20-MHz LTE signal with 7.5 dB PAPR, the proposed Doherty amplifier power, combined with digital pre-distortion, achieved adjacent channel leakage ratios below -47.2 dBc. The DPA demonstrate superior performance in OPBO range and efficiency, which makes it an ideal component for base station communication systems.
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