Abstract
Buried-regrown-implant-structure (BRIS) technology combines two-step epitaxial regrowth with an intermediate ion implantation step in order to realise a buried current aperture close to the active region of a laser diode. In this paper we carry out a systematic performance comparison demonstrating the benefit of BRIS technology in single emitter broad-area lasers (BALs). We investigate stripe width W = 100 μ m and resonator length L = 4 mm single emitter lasers emitting at wavelength λ = 915 nm, comparing the performance of BRIS devices with different implantation depths with reference devices with only contact layer implantation. We show that using BRIS technology we achieve a continuous wave output power of 20 W at 57% efficiency, with a peak efficiency of 68%, and maintain a lateral brightness of 3.4 mm · mrad up to 19 W, improved over the reference devices due to reduced lateral current spreading in the BRIS devices. Further, we show results of ongoing aging experiments, which has shown no device degradation up to 5000 hours from BRIS devices.
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