Abstract
In this paper, low-temperature deposited microcrystalline silicon (μc-Si) was applied to make a high-performance thin film transistor (TFT). The a-Si film is used as a carrier-blocking layer inserted into μc-Si TFT for suppressing unwanted OFF-state current. This compound TFT can achieve higher driving current (1.47×10 6 A) than the conventional a-Si TFT. Other parameters such as threshold voltage ( V th), sub-threshold swing (SS) and field effective carrier mobility value were 1.34 V, 1.32 V/dec and 1.05 cm 2/V s, respectively. It is noted that all the process for compound TFT are compactable with current a-Si industry.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
