High dose nitrogen and carbon shallow implantation in Si by plasma immersion ion implantation

Abstract

We have performed plasma immersion ion implantation (PIII) processing to dope Si (0 0 1) wafers with nitrogen and carbon at high doses, relying on two different PIII systems: one at the Institute for Ion Beam Physics at Dresden and the other at INPE. In the first system based on an ECR plasma source, we carried out nitrogen and carbon implantation in Si samples at 35 keV, with delivered doses (DD) ranging from 0.6×10 17 to 3.1×10 18 cm −2. On the other hand, nitrogen implantation in Si samples at 12 keV with doses from 1.2×10 17 to 2.4×10 18 cm −2 were conducted in the second system with a glow discharge plasma source. Surface characterizations of these samples based on Auger electron spectroscopy (AES), surface profiler, Fourier transform infrared (FTIR) spectroscopy and a high-resolution X-ray diffractometer indicated different implanted profiles, maximum implanted depths, stresses and etching depths, as well as characteristic surface colors, depending on the doped species, energies and used delivered doses. Comparisons of these results and their interrelationship are discussed in this paper.