Abstract
High-dose implantations of Fe into metals and semiconductors have been performed with energies up to 1 MeV at the UNILAC injector at GSI. Unusually high concentrations of 70 at.% for Si and 20 at.% for Cu have been obtained, with doses of 10 18 Fe/cm 2 in the case of Si and several times 10 17 Fe/cm 2 in the case of Cu. For Si the thicknesses of the layers were determined by Rutherford backscattering to be 4500 Å. These results are consistent with calculations, which show that these high concentrations are due to the reduction of the sputter yield at the relatively high particle energies. The cases of Si, Cu and Pb will be discussed. Samples have been characterized using several complementary methods (Mossbauer spectroscopy (MS), Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES), scanning electron microscopy (SEM) and X-ray diffraction (XRD)).
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