High dose ion implantation in yttria-stabilized zirconia

Abstract

Abstract High dose 56Fe implantations (15–110 keV) in oxygen ion conducting solid solutions of 0.86 Zr02-0.14 YO1.5 [ZY14] are used to introduce electronic conductivity. The Fe distribution in the target as a function of the various implantation parameters (dose, acceleration voltage) has been studied. Different profile shapes can be obtained. A combination of a high surface concentration and a rather flat profile in a surface layer is possible. Strong deviations from the normally expected Gaussian distribution are found after high dose implantation due to sputtering effects. However, if the sputter yield is experimentally determined, good prediction of the implanted dopant distribution is still possible. The peak concentration of high dose distributions is situated at or close to the surface. This surface peak concentration is obtained at a steady-state situation of concurrent sputtering and implantation of Fe. A maximum surface concentration with respect to Zr(Fe/Zr = 1.0) is achieved with the highest implantation energy used (110 keV) because the sputter yield is relatively low as compared with lower energies. After prolonged heat treatment in air (800°C, 24–60 hours) of the samples implanted with a high dose Fe, Fe203-rich surface layers are formed. Rutherford Backscattering Spectrometry (RBS) is used for the profile analyses in combination with Auger Electron Spectroscopy (AES).