High dielectric permittivity impact on SOI Double-Gate Mosfet

Abstract

As CMOS scaling is approaching the limit imposed by gate oxide tunneling, could as keep the Moore’s law without diminishing improvement in the on current Ioff and increases in Ion current? In spite of progress in silicon technology, the end of MOSFET scaling can be anticipated for the year 2015 so the introduction of high permittivity gate dielectric is the envisaged solution. In this paper, we highlight the quantum effects on the performance of SOI DG MOSFETs when SiO2 is replaced by ZrO2 and HfO2 as the gate dielectrics.It is observed that the use of high permittivity oxides reduce the gate dielectric electrical thickness, decrease tunnel current and maintain high drive current. A good agreement with numerical simulation results is obtained, for which the simulations show significant improvements compared with SOI DGMOSFET using SiO2 gate dielectric.