Abstract
High-k Tb2O3 films deposited on strained-Si:C and treated with different post-rapid thermal annealing temperatures were formed as alternative gate dielectrics in metal oxide semiconductor devices. The dielectrics were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. It was found that Tb2O3 dielectrics properly annealed at 800°C form well-crystallized Tb2O3 structures with few defects.
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