Abstract
Abstract Tin sulfide semiconductor nanowires (NWs) have been widely investigated for photodetection applications because of their good optical and electrical properties. Herein, we synthesized n-type SnS2 NWs and then fabricated SnS2 NW photodetectors with a ferroelectric polymer side-gate. The strong electric field induced by ferroelectric polymer can effectively suppress the dark current and improve the detectivity in SnS2 NW photodetectors. The photodetectors after polarization depletion exhibit a high photoconductive gain of 4.0 × 105 and a high responsivity of 2.1 × 105 A W−1. Compared with devices without polarization depletion, the detectivity of polarization-depleted photodetectors is improved by at least two orders of magnitude, and the highest detectivity is 1.3 × 1016 Jones. Further, the rise and fall time are 56 and 91 ms respectively, which are about tens of times faster than those without polarization depletion. The device also shows a good spectral response from ultraviolet to near-infrared. This study demonstrates that ferroelectric materials can enhance optoelectronic properties of low-dimensional semiconductors for high-performance photodetectors.
Highlights
One-dimensional semiconductor NWs have been intensively studied for room-temperature photodetection with high sensitivity, gain and wide spectral response, etc. [1−6]
The strong electric field induced by ferroelectric polymer can effectively suppress the dark current and improve the detectivity in SnS2 NW photodetectors
The electron mobility μFE of single SnS2 NW field-effect transistors (FETs) is calculated using the expression: μFE = gmL2/(CgVds) [26, 27], where gm = dIds/dVgs is the transconductance and Cg is the capacitance of back-gated FET
Summary
One-dimensional semiconductor NWs have been intensively studied for room-temperature photodetection with high sensitivity, gain and wide spectral response, etc. [1−6]. P-type SnS NWs have been synthesized and demonstrated excellent optoelectronic performance in our previous work [7]. SnS2 is an n-type semiconductor with bandgap ranging from 2.1 to 2.4 eV [11, 15], and SnS2-based nanostructures have been demonstrated to show broad prospects in field-effect transistors [14, 15], battery materials [16, 17], photodetectors [12, 13, 18], gas sensors [19], and solar cells [20, 21]. To suppress the dark current caused by defect/trap induced carriers and improve the detectivity of photodetectors, we integrated ferroelectric polymer side-gate with SnS2 NW. The SnS2 NW photodetectors after polarization depletion exhibit a high photoconductive gain of 4.0 × 105, a high responsivity of 2.1 × 105 A W−1 and ultra-high detectivity of 1.3 × 1016 Jones
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