Abstract
We fabricated a photodetector device consisting of ITO/NiOx/Perovskite/PC60BM/BCP/Ag. The NiOx layer was deposited using the sol-gel and combustion processes. Combustion-processed NiOx films have advantages such as low annealing temperature, improved perovskite film quality, and better photodetector performance compared to the sol-gel processed NiOx film. The improved film quality, improved charge transfer, and reduced dark current of the device using combustion-processed NiOx film were investigated by measuring the current-voltage characteristics, transient photocurrent, and impedance analysis. The photodetector using the combustion-processed NiOx achieved a high detectivity of 1.20×1013 Jones and bandwidth of over 2 MHz at -0.1 V and 550 nm.
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