Abstract

We investigated the incorporation of Zr into TiOx cathode interlayers used as hole-blocking layers in an organometallic halide perovskite-based photodetector. The device configuration is ITO/PEDOT:PSS/CH3NH3PbIxCl3−x/PC60BM/Zr–TiOx/Al. The use of Zr–TiOx in the perovskite photodetector reduces the leakage current and improves carrier extraction. The performance of the perovskite photodetector was confirmed by analyzing the current–voltage characteristics, impedance behaviors, and dynamic characteristics. The device with a Zr–TiOx layer has a high specific detectivity of 1.37 × 1013 Jones and a bandwidth of 2.1 MHz at a relatively low reverse bias and light intensity. Therefore, it can be effectively applied to devices such as image and optical sensors.

Highlights

  • Organometallic halide perovskites of the form CH3NH3PbX3ÀxYx (MAPbX3ÀxYx), where X and Y denote halides such as I, Br, and Cl, have excellent semiconducting properties, such as broad absorption ranges, small exciton binding energies ($20 meV), and long charge diffusion lengths (100–1000 nm).[1,2,3] they have achieved certi ed photovoltaic power conversion efficiencies exceeding 20%.3 This outstanding progress in photoelectric conversion has prompted the application of perovskite thin lms in semiconductor devices

  • In order to explore the physical effects of incorporating Zr into TiOx on the performance of the perovskite-based photodetector, we investigated the densities of states (DoS) of the devices by measuring the transient photocurrent (TPC)

  • The surface defects of the TiOx layer were suppressed by incorporating Zr, which improved the hole-blocking ability of the layer

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Summary

Introduction

Organometallic halide perovskites of the form CH3NH3PbX3ÀxYx (MAPbX3ÀxYx), where X and Y denote halides such as I, Br, and Cl, have excellent semiconducting properties, such as broad absorption ranges, small exciton binding energies ($20 meV), and long charge diffusion lengths (100–1000 nm).[1,2,3] they have achieved certi ed photovoltaic power conversion efficiencies exceeding 20%.3 This outstanding progress in photoelectric conversion has prompted the application of perovskite thin lms in semiconductor devices. Organometallic halide perovskites of the form CH3NH3PbX3ÀxYx (MAPbX3ÀxYx), where X and Y denote halides such as I, Br, and Cl, have excellent semiconducting properties, such as broad absorption ranges, small exciton binding energies ($20 meV), and long charge diffusion lengths (100–1000 nm).[1,2,3] they have achieved certi ed photovoltaic power conversion efficiencies exceeding 20%.3. This outstanding progress in photoelectric conversion has prompted the application of perovskite thin lms in semiconductor devices. The perovskite layer is deposited by spin-coating onto the PEDOT:PSS layer as a light absorber, followed by the deposition of a thin PC60BM electron acceptor

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