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Abstract
Si 30 nm/Si 0.78Ge 0.22 5 nm superlattices were grown on (0 0 1) Si by solid source molecular beam epitaxy (MBE) at temperatures between 550°C and 810°C. Their structural properties were studied by high depth resolution RBS analysis. The sample grown at the highest temperature has the sharpest interfaces, correlating well with the observation by Raman spectroscopy of zone-folded acoustic modes. The Si and SiGe layer thickness and the Ge concentration were determined, and agree with sub-keV secondary ion mass spectroscopy (SIMS) results. Channelling shows a minimum yield better than 3%, denoting a good crystalline quality of the layers.
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