Abstract
ABSTRACTAluminum doped ZnOx (ZnOx:Al) films have been deposited on glass in an in-line industrialtype reactor by a metalorganic chemical vapor deposition process at atmospheric pressure. ZnOx:Al films can be grown at very high deposition rates of ~ 14 nm/s for a substrate speed from 150 mm/min to 500 mm/min. ZnOx:Al films are highly conductive (R < 9 Ohm/sq, for a film thickness above 1300 nm) and transparent in the visible range (> 80%). Amorphous silicon p-i-n solar cells have been grown on as deposited ZnOx:Al films, without optimizing the surface texturing of ZnOx:Al films to enhance light scattering. An initial efficiency of approximately 8% has been achieved.
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