High density Si nanodots: fabrication and properties

Abstract

ABSTRACT We propose an approach to achieve single layer of Si nano dots arrays on insulating layer by using KrF pulsed excimer laser irradiation on ultra-thin hydrogenated amorphous silicon films followed by thermal annealing. Under the suitable fabrication conditions, the area density of formed Si nanostructures can be higher than 10 11 cm -2 as revealed by AFM images. The size of formed Si nanodots is 3-4 nm for sample with initial a-Si:H film thickness of 4 nm. Room temperature visible light emission can be observed from laser irradiated a-Si:H film after thermal annealing. The results on electron field em ission properties were also presented in this paper. Keywords: Si nanodots, laser crystallizati on, luminescence, field emission 1. INTRODUCTION Recently, fabrication and properties of low-dimensional Si structures, such as Si quantum well and Si nanodots, have attracted much attention because of their potential applications in many kinds of electric and optical devices. 1-2