Abstract
A novel high-density microwave plasma utilizing a spokewise antenna was produced and applied for high-rate and low-temperature deposition of hydrogenated microcrystalline silicon (μc-Si : H) film. The plasma maintains a uniform state, i.e., high electron density, n e>10 11 cm −3 and low temperature, T e of 2–2.5 eV in pure Ar plasma over 20 cm in a diameter. High deposition rate was achieved of 47 Å/s in the growth of highly crystallized and photoconductive μc-Si : H film at the axial distance, Z=6 cm from the quartz glass plate from SiH 4 and Ar without the use of H 2 dilution method at low substrate temperature, T s of 250°C. The effects of the total pressure, H 2 dilution ratio, flow rate of SiH 4, Fr(SiH 4) and the axial distance, Z from the quartz glass plate on the μc-Si : H film deposition are discussed along with the plasma diagnostics.
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