Abstract
Abstract : Ion implantation of device structures into magnetic garnet films is a developing technique for producing bubble memory devices. In order to specify the implantation species, energy and dose, it is necessary to know the effect that these implantation conditions have on the garnet's crystalline and magnetic properties. A kinematical model of X-ray diffraction was developed for a thin layer whose strain and damage distributions are functions of depth. The actual strain and damage distributions in ion-implanted layers may be obtained by fitting experimental X-ray diffraction rocking curves. Synthesis of the distributions is greatly facilitated by taking a rocking curve after each of a series of progressively deeper etching steps. A detailed description of the kinematical model is followed by its application to implanted garnet, and results are presented for single and multiple ion implantations. (Author)
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