Abstract
The fabrication and performance of large (16K, 60K, and 78K cells) high density CID self-scanned imager arrays is described. Array fabrication used overlapping electrodes of two levels of polysilicon or a first level of polysilicon and a second level of antimony tin oxide. Yield considerations and the special processing steps required to fabricate these large chips are examined. Quantum efficiency curves of these structures are compared.
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