High density and uniformity 1300 nm InAs/GaAs quantum dots grown on silicon substrate through molecular beam epitaxy

Abstract

The integration of III/V materials into silicon-based microelectronics has been the momentum in the development progress of silicon photonics in the past few decades. In this paper, the growth of InAs/GaAs quantum dots with the high density of 6.5 × 1010/cm2 on silicon substrate is demonstrated. The influence of different deposition amount of indium on the density of quantum dots under the same arsenic flux pressure is discussed in detail, from 2.21 monolayer, 2.38 monolayer to 2.55 monolayer. Atomic force microscopy measurement and photoluminescence test are conducted to characterize the materials growth. The InAs/GaAs quantum dots exhibit the best dot density and size uniformity as well as the strongest intensity of photoluminescence at the deposition amount of 2.38 monolayer. This result provides stable foundation for the realization of III/V quantum dot materials as the photonic components into silicon-based lasers.