Abstract
III–V compound semiconductor quantum dots (QDs) photonic devices are very attractive because of their many advantages. We developed a defect-free top-down fabrication process for sub-20-nm-diameter GaAs quantum nanodisks (NDs)by using a bio-template and neutral beam etching (NBE). We successfully fabricated 100-nm-high nanopillars embedded in 8-nm-thick GaAs and 30-nm-thick Al0.3Ga0.7As barrier-stacked structures. The GaAs capping layer and Al0.3Ga0.7As barrier layer were regrown by metalorganic vapor phase epitaxy (MOVPE). We measured the photoluminescence (PL) originating from the GaAs NDs at 6 K. To realize NDs laser diodes by top-down fabrication is a great challenge.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
