Abstract
In this work, fluorine plasma ion implantation is used to induce high densities of free holes in homoepitaxial n-GaN for the first time, as evidenced by electroluminescence and p-n junction rectification. F+ ions implanted into the near-surface layer capture electrons from shallow bulk donors, bending the band upward until a high density of free holes is induced at the valence band maximum, and surface donors, depinning the Fermi level to form p-type ohmic contact. Free holes tunnel from the metal into states at the valence band maximum, where they form a conductive p-type channel, benefitting the development of GaN-based junction devices.
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