Abstract

A gain-boost class-C inverter that simultaneously targets high DC gain and wide output swing is proposed in this study. Unlike those of the traditional gain-boost class-C inverter, the input transistors of the proposed gain-boost circuit for the PMOS cascode circuit are n type, whereas those for the NMOS cascode circuit are p type. Consequently, the output swing of the proposed gain-boost class-C inverter is unrestricted by the gain-boost circuit, and thus, a wide output swing can be achieved. A self-cascode structure is also adopted for the gain-boost circuit, thereby allowing it to obtain high DC gain. When compared with the traditional gain-boost class-C inverter with the same input transistor size, power consumption, and load capacitance, simulation results show that the proposed gain-boost class-C inverter improves DC gain by over 35% and boost output swing by over 20%.

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