Abstract
2W CW output power has been obtained (driver-limited) from aluminum-free, strained-layer double quantum well (DQW) InGaAs/InGaAsP/InGaP uncoated ‘broad area’ diode lasers (λ = 0.96 µm) grown by low pressure MOCVD. Power conversion (‘wallplug’) efficiencies of 43.3% are achieved at 1.6 W CW output power. The combination of high bandgap (1.62 eV) InGaAsP confinement layers and the DQW structure provides relatively weak temperature dependence of both the threshold current and the external differential quantum efficiency.
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