Abstract
Solar cells utilizing thin-film polycrystalline silicon can achieve photovoltaic power conversion efficiencies greater than 19%. These high efficiencies are a result of light trapping and back surface passivation. Optimum silicon thickness, for devices employing such technology, has been determined to be 20 μm (Blakers et al., Appl. Phys. Lett. 60 (1992) 2572) to 35 μm (Rand et al., Proceedings of the IEEE Photovoltaic Specialist Conference, Orlando, FL, May 1990, p. 263). Low cost is achieved by minimizing the required amount of silicon feedstock per watt of power output. The use of an electrically insulating supporting substrate allows for monolithic, series connected sub-modules. A solar cell with a 20 μm thick polycrystalline Si-layer on a ceramic substrate, utilizing both light trapping and back-surface passivation, was fabricated and characterized. A short-circuit current of 25.8 mA/cm 2 was measured and verified by the National Renewable Energy Laboratory (NREL).
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