Abstract
2-D materials are promising for future advanced electronics beyond silicon due to their intrinsic ultrathin body for enhanced electrostatic gate control. Herein, an omega-shaped dual-gated MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> transistors based on Ag nanowire (NW) as buried gate are fabricated, and the omega-shaped gate architecture enables enhanced local gate controllability, leading to excellent electrical performance with an ON-/ OFF-current ratio of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> and a subthreshold swing (SS) of 76 mV/dec at room temperature. By controlling the threshold voltage of the transistor with dual gate, an inverter and a NAND gate circuit are fabricated, and the voltage gain of inverters is 36 with high noise margin of 87% <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{{\text{DD}}}$ </tex-math></inline-formula> . This work demonstrates an avenue for high-current MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> transistors.
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