Abstract
We present electrical characterization of GaSb/InAs(Sb) nanowire tunnel field-effect transistors. The broken band alignment of the GaSb/InAs(Sb) heterostructure is exploited to allow for interband tunneling without a barrier, leading to high on-current levels. We report a maximum drive current of 310 μA/μm at VDS = 0.5 V. Devices with scaled gate oxides display transconductances up to gm = 250 mS/mm at VDS = 300 mV, which are normalized to the nanowire circumference at the axial heterojunction.
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