High current gain transistor laser.

Wei Wang,Hongliang Zhu,Song Liang,Lijun Qiao

doi:10.1038/srep27850

Wei Wang, Hongliang Zhu + Show 2 more

Open Access

https://doi.org/10.1038/srep27850

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Abstract

A transistor laser (TL), having the structure of a transistor with multi-quantum wells near its base region, bridges the functionality gap between lasers and transistors. However, light emission is produced at the expense of current gain for all the TLs reported up to now, leading to a very low current gain. We propose a novel design of TLs, which have an n-doped InP layer inserted in the emitter ridge. Numerical studies show that a current flow aperture for only holes can be formed in the center of the emitter ridge. As a result, the common emitter current gain can be as large as 143.3, which is over 15 times larger than that of a TL without the aperture. Besides, the effects of nonradiative recombination defects can be reduced greatly because the flow of holes is confined in the center region of the emitter ridge.

Highlights

A transistor laser (TL), having the structure of a transistor with multi-quantum wells near its base region, bridges the functionality gap between lasers and transistors
We propose a novel TL structure which has an n-doped InP layer inserted in the emitter ridge, forming a flow aperture in the center of the emitter ridge for only holes
In the outer parts of the emitter ridge, an n-doped InP layer is placed above the base layer

Summary

Introduction

A transistor laser (TL), having the structure of a transistor with multi-quantum wells near its base region, bridges the functionality gap between lasers and transistors. Light emission is produced at the expense of current gain for all the TLs reported up to now, leading to a very low current gain. Numerical studies show that a current flow aperture for only holes can be formed in the center of the emitter ridge. Light emission for all the TLs reported up to now is produced at the expense of current gain. We propose a novel TL structure which has an n-doped InP layer inserted in the emitter ridge, forming a flow aperture in the center of the emitter ridge for only holes. It is shown that while the light emission power of a-TLs is comparable with that of TLs without the aperture at the same base current, the CE current gain of a-TLs can be over 15 times larger

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Conclusion