High current densities in a highly photoluminescent organic single-crystal light-emitting transistor

Abstract

We report the improvement of electron transport in 5,5″-bis(biphenylyl)-2,2′:5′,2″-terthiophene (BP3T) single crystals on a field-effect transistor configuration by systematically investigating the effects of device aging under pure nitrogen and optimizing the organic dielectric layer-fabrication process. We reduced the effect of electron traps and achieved extremely high current densities up to 10 kA/cm2, which is one or two orders of magnitude greater than the current densities achieved in previous devices.