Abstract
In order to improve the performance and clarify the operation mechanism of the vertical-type metal-base organic transistor with a simple organic/metal/organic layered structure, the influence of the electron injection at the emitter electrode interface on modulation current has been investigated using the several emitter metal electrodes. The low injection barrier resulted in large modulation current. When a LiF∕Al emitter electrode was used for C60 organic semiconductor, this device achieved a high current modulation—exceeding 250mA∕cm2 for a low collector voltage of 3.0V and a base voltage of 1.25V.
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