Abstract
Two kinds of epitaxial structures were grown by standard pulsed laser deposition on (001) Si, namelyLa0.7Sr0.3MnO3/Bi4Ti3O12/CeO2 /YSZ/Si(BTO-based), and La0.7Sr0.3MnO3/SrTiO3/CeO2 /YSZ/Si (STO-based) multilayers. The samples were investigated by means of x-ray diffraction,transmission electron microscopy, magnetic and transport measurements. The Curie temperatureTC of the BTO-based samples was found to be higher (360 K) thanfor the typical reference epitaxial LSMO film grown on (001)SrTiO3 single crystal (345 K), due to high compressive in-plane strain. TheSTO-based samples show high structural quality, low roughness and highTC (350 K), making them interesting candidates for use in innovative LSMO-based bolometersor spintronic devices operating at room temperature.
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