Abstract

The aim is to examine the spin‐polarized electronic band structures, the density of states (DOS) as well as magnetism of CoxZn1−xSe and NixZn1−xSe diluted magnetic semiconductors (DMSs) in the ferromagnetic (FM) phase, and with 12.5% and 6.25% concentrations of impurity. The calculations are implemented by the recent ab initio norm‐conserving FHI pseudopotential method within the local spin density approximation and Hubbard U (LSDA + U) method. The analysis of the total DOS (TDOS) curves shows the half‐metallic FM character for Ni‐doped and (Co, Ni)‐co‐doped ZnSe with a half‐metallic bandgap of 1 ÷ 1.6 eV. The exchange splittings produced by dopant d states are determined: for the CoxZn1−xSe, it is obtained that the effective potential for the majority spin is more attractive than for the minority spin. The total magnetic moments of Co‐doped, Ni‐doped, and co‐doped ZnSe DMSs are found to be equal to 3, 4, and 5.0 μB, respectively. The Curie temperature of NixZn1−xSe is higher than room temperature and this is half‐metallic ferromagnetic (HMFM) material for spintronics application. Co‐doped ZnSe is an excellent choice for electronic devices owing to its below Curie temperature.

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