Abstract
Two-dimensional (2D) metasurface integrated with strip waveguide in silicon-on-insulator (SOI) has been designed to achieve high coupling efficiency for 3.8 μm wavelength. The optimisation in period and radius has been achieved using 3D finite-difference time-domain (FDTD). The calculated coupling efficiency in the in-plane waveguide for the out-of-plane surface illumination is over 90% with a bandwidth of 1 μm. The design is consistent with the available lithography using 400 nm thick SOI for mid-IR applications. Finally, monolithic integration can be achieved using standard multi-project wafer run.
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