High contrast multiple quantum well optical bistable device with integrated Bragg reflectors

Abstract

Monolithic bistable étalons with a GaAs/Al0.3Ga0.7As multiple quantum well active layer and AlAs/Al0.1Ga0.9As Bragg reflectors have been fabricated by metalorganic vapor phase epitaxy. The design of the whole structure is such that a good cavity finesse and a high contrast in the reflective mode are simultaneously obtained. This results in a bistability power threshold of <3 mW at 838 nm and a contrast ratio as high as 30:1. The nonlinear refractive index is shown to saturate at higher power, which evidences the need of a good cavity finesse for such bistable devices.