Abstract
Transparent zinc oxide (ZnO) films were deposited using an aqueous solution process at a substrate temperature below 100 °C. The as-deposited ZnO films exhibited high transmittance because of the presence of citrates ions. While the as-deposited ZnO films possessed high resistivity of several hundred Ω cm, it was markedly lowered by hydrogen treatment and UV irradiation. A ZnO film with a low resistivity of 1.8 × 10−3 Ω cm, high mobility of 11.2 cm2 V−1 s−1 and high carrier concentration of 1.5 × 1020 cm−3 was attained by both hydrogen reduction and UV irradiation. Hydrogen treatment increased mobility by decreasing the number of negatively charged oxygen species present in the films. Meanwhile, UV irradiation caused ZnO to photo-catalytically degrade organic materials in the films to increase carrier concentration.
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