High-conductive nanocrystalline silicon with phosphorous and boron doping

Abstract

Intrinsic, P- and B-doped hydrogenated amorphous silicon thin films were prepared by plasma-enhanced chemical vapor deposition technique. As-deposited samples were thermally annealed at the temperature of 800 °C to obtain the doped nanocrystalline silicon (nc-Si) films. The microstructures, optical and electronic properties have been evaluated for the undoped and doped nanocrystalline films. X-ray photoelectron spectroscopy (XPS) measurements demonstrated the presence of the substitutional boron and phosphorous in the doped films. It was found that thermal annealing can efficiently activate the dopants in films accompanying with formation of nc-Si grains. Based on the temperature-dependent conductivity measurements, it was shown that the activation of dopant by annealing increased the room temperature dark conductivity from 3.4 × 10 −4 S cm −1 to 5.3 S cm −1 for the P-doped films and from 1.28 × 10 −3 S cm −1 to 130 S cm −1 for the B-doped films. Meanwhile, the corresponding value of conductivity activation energies was decreased from 0.29 eV to 0.03 eV for the P-doped films and from 0.3 eV to 5.6 × 10 −5 eV for the B-doped films, which indicated the doped nc-Si films with high conductivity can be achieved with the present approach.