Abstract
Nitrogen atoms were introduced into liquid encapsulated Czochralski (LEC) grown GaAs substrates for the nitrogen concentration ([N]) range of 1 × 10 18 cm −3 to 1 × 10 22 cm −3 by high-energy (400 keV) ion implantation. For heat treatment, both furnace annealing (FA) and rapid thermal annealing (RTA) were adopted. Novel emissions denoted by N i ( i = 1–5), were observed in the 2 K photoluminescence (PL) spectra of FA samples with [N] higher than 2 × 10 21 cm −3. An emission at around 1.30 eV denoted by N 5 or N′ 5, were suggested to be related with the band gap energies of GaAs 1− x N x alloys, which was predicted by a theory on the band gap bowing of this alloy system. Based on this empirical model, we estimated the amount of nitrogen x to be around 0.018.
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