High concentration n-type doping in Si layers epitaxially grown by ultra-high vacuum chemical vapor deposition with cracking heater

Abstract

A novel growth technique for high concentration n-type doping in silicon layers is demonstrated. An extra heater to decompose source molecules is added to a conventional ultra-high vacuum chemical vapor deposition system. The growth of silicon layers occurs at a low substrate temperature of 500°C, where the segregation of dopant atoms is minimal. A doping concentration as high as 1 × 10 20 atoms/cm 3 was achieved with arsine molecules as the dopant source. An abrupt doping profile of a 3 decade variation in less than 10 nm is also achieved.