Abstract
Medium energy ion scattering, X-ray standing waves and measurements of crystal truncation rods were used to show that it is possible to prepare spatially well confined Bi doping layers (δ-doping layers) on Si(001) with a Bi doping level of 3 × 1021cm−3 by a combination of Bi molecular beam epitaxy and low temperature deposition of a Si top layer with subsequent annealing (solid phase epitaxy). The Bi concentration exceeds the equilibrium Bi solubility by more than three orders of magnitude. The Bi atoms are incorporated into the Si host lattice on substitutional sites. The Bi doping profile exponentially decays into the top Si layer with an attenuation length ranging from 40 to 6Åand a fraction of Bi atoms in substitutional lattice sites of up to 96%, depending on the annealing conditions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.