High charge density and mobility in poly(3-hexylthiophene) using a polarizable gate dielectric

Abstract

Organic field-effect transistors (OFETs) typically exhibit either a high charge transport mobility or a high charge density. Here we demonstrate an OFET in which both the mobility and the charge density have high values of 0.1 cm(2)/V s and 28 mC/m(2), respectively. The high charge density is induced by the ferroelectric polarization of the gate dielectric poly(vinylidene fluoride/trifluoroethylene). The high mobility is achieved in a regioregular poly(3-hexylthiophene) semiconductor using a transistor with a top-gate layout that inherently exhibits a smooth semiconductor-dielectric interface. The combination of high mobility and charge density yields a record conductance value for polymer-based FETs of 0.3 mu S. (c) 2005 Elsevier B.V. All rights reserved.