High characteristic temperature of 1·3 µm crescent buried heterostructure laser diodes

Abstract

Two-step liquid phase epitaxy and preferential etching technique have been used to fabricate 1·3 µm InGaAsP/InP buried crescent laser. The p-n-p-n thristor-like structure is used as the blocking layers. The leakage current is very small even at high temperatures. The characteristic temperatureT 0 at room temperature is as high as 79 K. This value is higher than those ever reported.