High Carrier Mobility and Controllable Electronic Property of the h-BN/SnSe2 Heterostructure.

Abstract

Building two-dimensional (2D) vertical van der Waals heterostructures (vdWHs) is one of the effective methods to regulate the properties of single 2D materials. In this paper, we stack the hexagonal boron nitride (h-BN) monolayer (ML) on the SnSe2 ML to construct the stable h-BN/SnSe2 vdWH, of which the crystal and electronic structures, together with the optical properties, are also analyzed by the first-principles calculations. The results show that the h-BN/SnSe2 vdWH belongs to a type-I heterostructure with an indirect bandgap of 1.33 eV, in which the valence band maximum and conduction band minimum are both determined by the component SnSe2 ML. Interestingly, the h-BN/SnSe2 vdWH under the tensile strain or electric field undergoes the transitions both from type-I to type-II heterostructure and from the indirect to direct bandgap semiconductor. In addition, the carrier mobility of the h-BN/SnSe2 heterostructure has a significant enhancement relative to that of the SnSe2 ML, up to 104 cm2 V-1 s-1. Meanwhile, the h-BN/SnSe2 heterostructure presents the superb optical absorption and unique type-II hyperbolic property. Our findings will broaden the potential applications of SnSe2 ML and provide theoretical guidance for the related experimental studies.