Abstract
GaSe is widely used in optoelectronics, and its nanosheets exhibit excellent on–off current ratios and photoresponsivity. However, its large band gap limits visible light absorption. Here, through constructing GaSe/SnSe heterojunction, we found the hole and electron mobility can reach 5916 and 483.53 cm2V−1s−1, 846 and 1.4 times higher than mono-SnSe, respectively, due to it forming type-II band alignment reducing the recombination. In addition, the absorption spectrum can be broadened to the near-infrared spectrum (the band gap can be decreased to 0) through a biaxial strain or electrical field. This work provides a method to highly improve the efficiency and application scope of GaSe optoelectronic devices.
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