Abstract
The ZnO microwires were synthesized repetitively via chemical vapor deposition method. The high power light emitting diode based on the single ZnO microwire/p-GaN heterojunction was realized. A strong ultraviolet emission accompanied by a relatively weak defects-related emission was observed at room temperature photoluminescence spectra of single ZnO microwire. The I–V curve of the heterojunction diode showed obvious rectifying characteristics with a turn-on voltage of about 7V. Under the forward injection current of 1.1mA, the ultraviolet electroluminescence centered at 389nm wavelength could be obtained based on the single ZnO microwire/p-GaN heterojunction diode.
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