High breakdown voltage with low on-state resistance of p-InGaN∕n-GaN vertical conducting diodes on n-GaN substrates

Abstract

p - In Ga N ∕ n - Ga N vertical conducting diodes were grown on freestanding n-GaN substrates by metal organic vapor phase epitaxy. The homoepitaxial growth produced a high-quality GaN layer, as evidenced by the full width at half maximum of the (0002) x-ray rocking curve is as low as 34arcsec. For a diode with a 3.6-μm-thick n-GaN layer, a high breakdown voltage (VB) of 571V is obtained with a low on-state resistance (Ron) of 1.23mΩcm2, leading to the figure of merit, (VB)2∕Ron, of 265MW∕cm2. This is the highest value among those previously reported for GaN-based vertical conducting Schottky and p-n junction diodes.