Abstract
A double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor has been successfully fabricated by metalorganic chemical-vapor deposition. Improved electron mobility as high as 5410 (19 200) cm2/V s at 300 (77) K along with turn-on voltage as high as 2.3 V and reverse gate-to-drain voltage up to 75 V are achieved. These characteristics are attributed to the use of the δ-doped, undoped InGaP Schottky layer, and undoped GaAs setback layer. Moreover, the parasitic parallel conduction can be eliminated. The activation energy is also deduced.
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