Abstract
The junction diode as a high-voltage rectifier has a great impact within the electronic industry because of its applications. It has been synthesized accommodating two dimensional materials, [Sahatiya et al., 2D Mater. 4(2), 025053 (2017)]. Si-based p-n junctions and Si-based heterostructures in combination with complex oxides [Zhao et al., Appl. Phys. Lett. 93(25), 252110 (2008)]. In this Letter, we have synthesized the p–i–n junction using complex oxides La0.7Sr0.3MnO3 (LSMO), LaAlO3 (LAO), and SrTiO3 (STO), which exhibits the rectifying behavior as Si-based heterostructures in combination with complex oxides. In addition, the light-induced weak localization effect is observed in the LSMO film. This research will further assist in the growth of the electronic industry of STO-based heterostructures.
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