Abstract
In the present paper we report on the formation of n-GaAs/nietal Schottky junctions by electrochemical metal deposition. This technique yields barrier heights at the n-GaAs/metal interface in the range of 1.15–1.2 eV as determined by three independent methods, using Cu, Au and Pt as a metal. The junctions exhibit an excellent photoelectric performance and the forward current-potential behavior investigated over a wide temperature range follows the thermionic emission model. The formation of a large barrier height is discussed in terms of the interfacial chemistry at semiconductor/electrolyte contacts and related to models derived for interfaces produced in ultrahigh vacuum.
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