Abstract
In/sub 0.53/Ga/sub 0.47/As epilayers were grown on InP substrates by the method of liquid phase epitaxy (LPE) with the addition of Pr/sub 2/O/sub 3/ into the growth melt. A very low background impurity is obtained(/spl sim/10/sup 15/cm/sup -3/). The corresponding mobility also significantly increases from 15321 to 32171 cm/sup 2//V-s at 77 K. The low background concentration and high mobility is credited to the gettering effect from the addition of Pr in the growth melt. Furthermore, In/sub 0.53/Ga/sub 0.47/As Schottky diodes with a barrier height of /spl sim/0.7 eV are constantly observed, regardless of the utilization of different metals as the Schottky contacts. The high Schottky barrier is attributed to the decrease of the surface states on the surface of the epilayer. The high Schottky barrier is very stable even at high measuring temperature and was repeatedly obtained after four months of exposure to the environment.
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