Abstract
AbstractWe present some results on Fe-Co-B based microwave band-stop filters. These structures, prepared on GaAs substrates, are compatible in size and growth process with on-chip high-frequency electronics. The absorption notch in transmission can be tuned to various frequencies by varying an external applied magnetic field. For our devices, which incorporate Fe-Co-B as the ferromagnetic material, the resultant FMR frequencies range from 8-16 GHz for applied fields up to only 900 Oe. Comparatively, the frequency range of those devices using permalloy and Fe is substantially lower than Fe-Co-B-based devices for applied the same fields. We constructed devices using monocrystalline Fe-Co-B films grown in a sputtering system. Our devices are of different construction than other dielectric microstrips and show much improvement in terms of notch width and depth. The maximum attenuations of 5 dB/cm and 50dB/cm are observed respectively in two different structures.Keywordsband-stop filtersFe-Co-Bferromagnetic resonance frequency
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