High Aspect-Ratio ZnO Nanowires Based Nanoscale Field Effect Transistors

Abstract

High aspect-ratio ZnO nanowires were grown onto the copper foil, in a large-quantity, by non-catalytic thermal evaporation method. The detailed morphological observations revealed that the diameters and lengths of as-grown nanowires are in the range of 60-100 nm and 10-30 microm, respectively exhibiting a very high-aspect ratio. Detailed structural characterizations confirmed that the as-grown nanowires are well crystalline and possess a wurtzite hexagonal phase, grown along the c-axis direction in preference. The presence of a sharp and strong UV emission at 381 nm in the room temperature photoluminescence (PL) spectrum affirmed that the obtained nanowires have good optical properties. The electrical transport properties of the as-grown nanowires was explored by fabricating the field effect transistors (FETs) using a single ZnO nanowire. From the fabricated single ZnO nanowire based FET, the electron carrier density and field effect mobility were estimated to be approximately 6.7 x 10(13) cm(-3) and approximately 3.8 cm2/Vs, respectively.